Toshiba on track for 16nm process...

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   A new semiconductor process that promises to be viable at 16nm - roughly half the size of today's state of the art technology.

While memory chips can currently be produced at 30nm and logic circuits at 42nm, Toshiba claims to have made a breakthrough in the use of strontium germanide to produce metal-insulator-semiconductor field-effect transistors, or MISFETs, at 16nm or below.

Toshiba says its evaluating the process to design 16nm chips and smaller.  The company will present a paper on the process at the 2009 VLSI Symposia in Kyoto, Japan later this week.

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Zardoz8719 Members Profile Find Members Posts Add to Buddy List Senior Member Joined: 04 Mar 2009 Online Status: Offline Posts: 543	Quote Reply Topic: Toshiba on track for 16nm process... Posted: 15 Jun 2009 at 7:02pm
	A new semiconductor process that promises to be viable at 16nm - roughly half the size of today's state of the art technology. While memory chips can currently be produced at 30nm and logic circuits at 42nm, Toshiba claims to have made a breakthrough in the use of strontium germanide to produce metal-insulator-semiconductor field-effect transistors, or MISFETs, at 16nm or below. Toshiba says its evaluating the process to design 16nm chips and smaller. The company will present a paper on the process at the 2009 VLSI Symposia in Kyoto, Japan later this week.

Toshiba on track for 16nm process...

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